Product Summary

The TPV8100B is a NPN silicon RF power transistor. It is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.

Parametrics

TPV8100B absolute maximum ratings: (1)Collector–Emitter Voltage VCER: 40 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4 Vdc; (4)Collector–Current — Continuous IC: 12 Adc; (5)Total Device Dissipation @ 25℃ Case PD: 215 Watts; Derate above 25℃ PD: 1.25 W/℃; (6)Operating Junction Temperature TJ: 200 ℃; (7)Storage Temperature Range Tstg: -65 to +150 ℃.

Features

TPV8100B features: (1)To be used class AB for TV band IV and V; (2)Specified 28 Volts, 860 MHz Characteristics: Output Power = 125 Watts (peak sync.); Output Power = 100 Watts (CW); Minimum Gain = 8.5 dB; (3)Specified 32 Volts, 860 MHz Characteristics: Output Power = 150 Watts (peak sync.); (4)Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

Diagrams

TPV8100B  TEST CIRCUIT

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TPV8100B
TPV8100B

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $121.13
1-10: $111.15
10-25: $99.75
25-50: $88.35
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TPV8100B
TPV8100B

Advanced Semiconductor, Inc.

Transistors RF Bipolar Power RF Transistor

Data Sheet

0-1: $121.13
1-10: $111.15
10-25: $99.75
25-50: $88.35
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TPV8100

Other


Data Sheet

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